BSB017N03LX3 G

n-Channel Power MOSFET OptiMOS™ BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB017N03LX3 G 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications Features • • • • • • • • • • • • Optimized for high switching frequency DC/DC converter 100% avalanche tested Very low on-resistance RDS(on) Excellent gate charge x RDS(on) product (FOM) Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double.sided cooling Low parasitic inductance Compatible with DirectFET® package MX footprint and outline 100% Rg Tested Low profile (2|ID|RDS(on)max, ID=30 A Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Input capacitance Ciss - 5900 7800 Output capacitance Coss - 2300 3100 Reverse transfer capacitance Crss - 120 - Turn-on delay time td(on) - 5.8 - Rise time tr - 6.4 - Turn-off delay time td(off) - 35 - Fall time tf - 6 - Final Data Sheet 3 Unit Note / Test Condition pF VGS=0 V, VDS=15 V, f=1 MHz ns VDD=15V, VGS=10 V, ID=30 A, RG= 1.6 Ω 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Electrical characteristics Table 6 Gate charge characteristics1) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition nC VDD=15 V, ID=30 A, VGS=0 to 4.5 V Gate to source charge Qgs - 17 - Gate charge at threshold Qg(th) - 9.5 - Gate to drain charge Qgd - 8.2 - Switching charge Qsw - 15 - Gate charge total Qg - 37 49 Gate plateau voltage Vplateau - 2.8 - V Gate charge total Qg - 77 102 nC Gate charge total, sync. FET Qg(sync) - 32 - VDS=0.1 V, VGS=0 to 4.5 V Output charge Qoss - 50 - VDD=15 V, VGS=0 V VDD=15 V, ID=30 A, VGS=0 to 10V 1) See figure 16 for gate charge parameter definition Table 7 Reverse diode characteristics Parameter Symbol Values Min. Typ. Unit Note / Test Condition A TC=25 °C Max. Diode continuous forward current Is 52 Diode pulse current IS,pulse 400 Diode forward voltage VSD - 0.79 1.1 V VGS=0 V, IF=30 A, Tj=25 °C Reverse recovery charge Qrr - - 50 nC VR=15 V, IF=Is, diF/dt=400 A/µs Final Data Sheet 4 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C ID=f(VDS); TC=25 °C; D=0; parameter: Tp Final Data Sheet 4 Max. transient thermal impedance Z(thJC)=f(tp); parameter: D=tp/T 5 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Final Data Sheet 6 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Final Data Sheet 7 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15 15 Drain-source breakdown voltage 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Final Data Sheet 8 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Package outlines 6 Package outlines Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches Final Data Sheet 9 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Package outlines 7 Package outlines Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches Final Data Sheet 10 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Package outlines 8 Package outlines Final Data Sheet 11 2.2, 2011-05-27 OptiMOS™ Power-MOSFET BSB017N03LX3 G Revision History 9 Revision History Revision History: 2011-05-27, 2.2 Previous Revision: Revision Subjects (major changes since last revision) 0.1 Release of target data sheet 2.0 Release of final data sheet 2.2 DirectFET Disclaimer expired We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-05-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 12 2.2, 2011-05-27